N-Channel Enhancement Mode Field Effect Transistor
Description
CEP30N3/CEB30N3
CEF30N3
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type CEP30N3 CEB30N3 CEF30N3
VDSS 300V 300V
300V
RDS(ON) 110mΩ 110mΩ
110mΩ
ID 30A 30A 30A e
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.
D
DG
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