N-Channel Enhancement Mode Field Effect Transistor
Description
CEP18N5/CEB18N5
CEF18N5
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type CEP18N5 CEB18N5 CEF18N5
VDSS 500V 500V
500V
RDS(ON) 0.27Ω 0.27Ω
0.27Ω
ID 18A 18A 18A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.
D
DG
G ...
