Document
CEP13N5A/CEB13N5A CEF13N5A
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type CEP13N5A CEB13N5A CEF13N5A
VDSS 500V 500V
500V
RDS(ON) 0.48Ω 0.48Ω
0.48Ω
ID 13A 13A 13A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.
D
DG
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C
@ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C Single Pulsed Avalanche Energy h Single Pulsed Avalanche Current h Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Symbol
Limit TO-220/263 TO-220F
VDS 500
VGS ±30
ID
13 13 d 8 8d
IDM e
52 52d
208 52 PD 1.7 0.4
EAS 542
IAS 8.5
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 0.6 62.5
2.4 65
Units
V V A A A W W/ C mJ A C
Units C/W C/W
Details are subject to change without notice .
1
Rev 2. 2013.Feb http://www.cetsemi.com
CEP13N5A/CEB13N5A CEF13N5A
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID = 250µA VDS =500V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V
Gate Threshold Voltage Static Drain-Source On-Resistance
VGS(th) RDS(on)
VGS = VDS, ID = 250µA VGS = 10V, ID = 6.5A
Dynamic Characteristics c
Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c
Ciss Coss Crss
VDS = 25V, VGS = 0V, f = 1.0 MHz
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
td(on) tr
td(off)
VDD = 250V, ID =13A, VGS = 10V, RGEN = 25Ω
Turn-Off Fall Time
tf
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg Qgs
VDS = 400V,ID = 13A, VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b
ISf VSDg
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) =6.6A . g.Full package VSD test condition IS =6.6A . h.L = 15mH, IAS =8.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C
VGS = 0V, IS = 13A
Min 500
2
Typ
0.38
1965 185
1 32 18 79 16 31 11 7
Max Units
1 100 -100
V µA nA nA
4V 0.48 Ω
pF pF pF
64 ns 36 ns 158 ns 32 ns 40 nC
nC nC
13 A 1.4 V
2
ID, Drain Current (A)
C, Capacitance (pF)
CEP13N5A/CEB13N5A CEF13N5A
12 10 VGS=10,9,8,7V
8
20 25 C
15
ID, Drain Current (A)
6 VGS=5V 4
2
0 0 2 4 6 8 10
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
10
5 TJ=125 C
-55 C
0 0 2 4 6 8 10
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2400 2000
Ciss
1600
1200
800
400 Coss 0 Crss 0 5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS 1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6 -50 -25 0 25 50 75 100 125 150 175
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation with Temperature
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
IS, Source-drain current (A)
3.0 ID=6.5A 2.5 VGS=10V
2.0
1.5
1.0
0.5
0.0 -100 -50 0 50 100 150 200
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation
with Temperature
101 VGS=0V
100
10-1 0.4
0.6
0.8 1.0 1.2 1.4 1.6
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage Variation with Source Current
VTH, Normalized Gate-Source Threshold Voltage
3
VGS, Gate to Source Voltage (V) ID, Drain Current (A)
CEP13N5A/CEB13N5A CEF13N5A
10 VDS=400V ID=13A
8
6
4
2
0 0 8 16 24 32
Qg, Total Gate Charge (nC) Figure 7. Gate Charge
VDD
VIN RL D VOUT
VGS RGEN G
S
102 RDS(ON)Limit
100ms 101 1ms
10ms DC 100
TC=25 C TJ=150 C 10-1 Single Pulse 100 101 102 103
VDS, Drain-Source Voltage (V)
Figure 8. Maximum Safe Operating Area
td(on) VOUT
t on tr
td(off)
90%
10% INVERTED
toff tf
90%
10%
VIN
10%
50%
90% 50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
r(t),Normalized Effective Transient Thermal Impedance
100 D=0.5
0.2
10-1
0.1
0.05
0.02 0.01 Single Pulse
10-2 10-5
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (msec)
PDM
t1 t2
1. R JC (t)=r (t) * R JC 2. R JC=See Datasheet 3. TJM-TC = P* R JC (t) 4. Duty Cycle, D=t1/t2
100
101
Figure 11. Normalized Thermal Transient Impedance Curve
4
.