Document
CEP12N65/CEB12N65
CEF12N65
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type CEP12N65 CEB12N65 CEF12N65
VDSS 650V 650V
650V
RDS(ON) 0.73Ω 0.73Ω
0.73Ω
ID 12A 12A 12A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.
D
DG
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a
VDS VGS ID IDM e
650
±30
12 48
12 d 48d
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
250 60 PD 1.67 0.4
Single Pulsed Avalanche Energy h Single Pulsed Avalanche Current h
EAS 607 IAS 9
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 0.6 62.5
2.5 65
Units
V V A A W W/ C mJ A C
Units C/W C/W
This is preliminary information on a new product in development now . Details are subject to change without notice .
1
Rev 4. 2012.Nov. http://www.cetsemi.com
CEP12N65/CEB12N65 CEF12N65
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID = 250µA VDS =650V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V
Gate Threshold Voltage Static Drain-Source On-Resistance
VGS(th) RDS(on)
VGS = VDS, ID = 250µA VGS = 10V, ID = 5.5A
Dynamic Characteristics c
Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c
Ciss Coss Crss
VDS = 25V, VGS = 0V, f = 1.0 MHz
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
td(on) tr
td(off)
VDD = 300V, ID =12A, VGS = 10V, RGEN = 25Ω
Turn-Off Fall Time
tf
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg Qgs
VDS = 400V,ID = 12A, VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b
ISf VSDg
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) =6A . g.Full package VSD test condition IS =6A . h.L = 15mH, IAS =9A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C.
VGS = 0V, IS = 12A
Min 650
2
Typ
0.61
1975 210 10 41 76 118 71 39 11 11
Max Units
1 100 -100
V µA nA nA
4V 0.73 Ω
pF pF pF
ns ns ns ns nC nC nC
12 A 1.4 V
2
ID, Drain Current (A)
C, Capacitance (pF)
CEP12N65/CEB12N65 CEF12N65
12 10 VGS=10,9,8,7,6V
8
6 4 VGS=5V
2 VGS=4V
0 0 2 4 6 8 10
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
ID, Drain Current (A)
20 25 C
15
10
5 TJ=125 C -55 C
0 0 2 4 6 8 10
VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
2700
2250 1800
Ciss
1350
900
450 Coss 0 Crss 0 5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS 1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6 -50 -25 0 25 50 75 100 125 150 175
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation with Temperature
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
IS, Source-drain current (A)
2.6 ID=5.5A 2.2 VGS=10V
1.8
1.4
1.0
0.6
0.2 -100 -50 0 50 100 150 200
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation
with Temperature
101 VGS=0V
100
10-1 0.4
0.6
0.8 1.0 1.2 1.4 1.6
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage Variation with Source Current
VTH, Normalized Gate-Source Threshold Voltage
3
VGS, Gate to Source Voltage (V) ID, Drain Current (A)
CEP12N65/CEB12N65 CEF12N65
10 VDS=400V ID=12A
8
6
4
2
0 0 10 20 30 40
Qg, Total Gate Charge (nC) Figure 7. Gate Charge
VDD
VIN RL D VOUT
VGS RGEN G
S
102 RDS(ON)Limit
100ms 101 1ms
10ms DC 100
TC=25 C TJ=175 C 10-1 Single Pulse 100 101 102 103
VDS, Drain-Source Voltage (V)
Figure 8. Maximum Safe Operating Area
td(on) VOUT
t on tr
td(off)
90%
10% INVERTED
toff tf
90%
10%
VIN
10%
50%
90% 50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
r(t),Normalized Effective Transient Thermal Impedance
100 D=0.5
0.2
10-1
0.1
0.05
0.02 0.01 Single Pulse
10-2 10-5
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (msec)
PDM
t1 t2
1. R JC (t)=r (t) * R JC 2. R JC=See Datasheet 3. TJM-TC = P* R JC (t) 4. Duty Cycle, D=t1/t2
100
101
Figure 11. Normalized Thermal Transient Impedance Curve
4
.