N-Channel Enhancement Mode Field Effect Transistor
Description
CEP12N65/CEB12N65
CEF12N65
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type CEP12N65 CEB12N65 CEF12N65
VDSS 650V 650V
650V
RDS(ON) 0.73Ω 0.73Ω
0.73Ω
ID 12A 12A 12A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.
D
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