N-Channel Enhancement Mode Field Effect Transistor
Description
CEP08N6A/CEB08N6A
CEF08N6A
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type CEP08N6A CEB08N6A CEF08N6A
VDSS 600V 600V
600V
RDS(ON) 1.25Ω 1.25Ω
1.25Ω
ID 7.5A 7.5A 7.5A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.
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