CEP04N65/CEB04N65
CEF04N65
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type CEP04N65 CE...
CEP04N65/CEB04N65
CEF04N65
N-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
Type CEP04N65 CEB04N65 CEF04N65
VDSS 650V
RDS(ON) 2.8Ω
ID 4A
@VGS 10V
650V 2.8Ω
4A
10V
650V 2.8Ω 4A d 10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.
D
DG
GS
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C
@ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Tc = 25 C unless otherwise noted
Symbol
Limit TO-220/263
VDS 650
VGS ±30
ID
4 2.4
IDM e
16
104 PD 0.83
TO-220F
4d 2.4 d 16 d 35 0.28
Single Pulsed Avalanche Energy g
Single Pulsed Avalanche Current g Operating and Store Temperature Range
EAS IAS TJ,Tstg
220 4.2 -55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 1.2 62.5
3.6 65
Units
V V A A A W W/ C mJ A C
Units C/W C/W
This is preliminary information on a new product in development now . Details are subject to change without notice .
1
Rev 1. 2012.Oct http://www.cetsemi.com
CEP04N65/CEB04N65 CEF04N65
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage Zero G...