CEB04N65

CEP04N65/CEB04N65 CEF04N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP04N65 CEB04N65 CEF04N65 VDSS 650V RDS(ON) 2.8Ω ID 4A @VGS 10V 650V 2.8Ω 4A 10V 650V 2.8Ω 4A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Tc = 25 C unless otherwise noted Symbol Limit TO-220/263 VDS 650 VGS ±30 ID 4 2.4 IDM e 16 104 PD 0.83 TO-220F 4d 2.4 d 16 d 35 0.28 Single Pulsed Avalanche Energy g Single Pulsed Avalanche Current g Operating and Store Temperature Range EAS IAS TJ,Tstg 220 4.2 -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.2 62.5 3.6 65 Units V V A A A W W/ C mJ A C Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2012.Oct http://www.cetsemi.com CEP04N65/CEB04N65 CEF04N65 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage Zero G...