MMFT2N25E

MMFT2N25E Product Preview High Energy Power FET N−Channel Enhancement−Mode Silicon Gate This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain−to−source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. Avalanche Energy Capability Specified at Elevated Temperature Internal Source−to−Drain Diode Designed to Replace External Zener Transient Suppressor − Absorbs High Energy in the Avalanche Mode Source−to−Drain Diode Recovery Time Comparable to Discrete Fast Recovery Diode http://onsemi.com POWER FET 2.0 AMPERES, 250 VOLTS RDS(on) = 3.5 W 4 CASE 318E−04, STYLE 3 12 TO−261AA 3 2,4 D 1 G MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Drain−to−Source Voltage VDSS Drain−to−Gate Voltage, RGS = 1.0 mW Gate−to−Source Voltage — Continuous VDGR VGS Gate−to−Source Voltage — Single Pulse (tp ≤ 50 mS) VGSM Drain Current — Continuous @ TC = 25°C Drain Current — Continuous @ TC = 100°C Drain Current — Single Pulse (tp ≤ 10 mS) ID ID IDM Total Power Dissipation @ TC = 25°C Derate above 25°C Total PD @ TA = 25°C mounted on 1″ Sq. Drain Pad on F...