High Energy Power FET
MMFT2N25E
Product Preview High Energy Power FET
N−Channel Enhancement−Mode Silicon Gate
This advanced high voltage MOSF...
Description
MMFT2N25E
Product Preview High Energy Power FET
N−Channel Enhancement−Mode Silicon Gate
This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain−to−source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
Avalanche Energy Capability Specified at Elevated Temperature Internal Source−to−Drain Diode Designed to Replace External Zener
Transient Suppressor − Absorbs High Energy in the Avalanche Mode
Source−to−Drain Diode Recovery Time Comparable to Discrete Fast
Recovery Diode
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POWER FET 2.0 AMPERES, 250 VOLTS
RDS(on) = 3.5 W
4
CASE 318E−04, STYLE 3
12
TO−261AA
3
2,4 D
1 G
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Drain−to−Source Voltage
VDSS
Drain−to−Gate Voltage, RGS = 1.0 mW Gate−to−Source Voltage — Continuous
VDGR VGS
Gate−to−Source Voltage — Single Pulse (tp ≤ 50 mS)
VGSM
Drain Current — Continuous @ TC = 25°C Drain Current — Continuous @ TC = 100°C Drain Current — Single Pulse (tp ≤ 10 mS)
ID ID IDM
Total Power Dissipation @ TC = 25°C Derate above 25°C
Total PD @ TA = 25°C mounted on 1″ Sq. Drain Pad on F...
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