Features
For general purpose applications The LL101 series is a metal-on-silicon Schottky barrier device which is protec...
Features
For general purpose applications The LL101 series is a metal-on-silicon
Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. These diodes are also available in the DO-35 case with type designations SD101A thru SD101C.
LL101A thru LL101C
Small-Signal Diode
Schottky Diodes
Mechanical Data
Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05g Cathode Band Color: Green
Maximum Ratings and Thermal Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified.)
Parameter
Symbol
Value
Peak inverse voltage Power dissipation (Infinite heatsink)
LL101A LL101B LL101C
Maximum single cycle surge 10 us square wave
Junction temperature
Storage temperature range
VRRM
Ptot IFSM Tj TS
60 50 40 400 (1)
2.0
125
-55 to +150
Notes: 1. Valid provided that electrodes are kept at ambient temperature.
Unit
Volts
mW Amps
oC oC
707
Electrical Characteristics
(TJ=25oC unless otherwise noted.)
Parameter
Reverse breakdown voltage Leakage current Forward voltage drop Junction capacitance
LL101A LL101B LL101C
LL101A LL101B LL101C
LL101A LL101B LL101C
LL101A LL101B LL101C
LL101A LL101B LL101C
Reverse recovery time
Symbol V(BR)R IR
VF
Ctot trr
Test Condition IR=10uA
VR=50V
IF=1mA
IF=15mA
VR=0V, f=1MHz IF=IR=5mA,
recover to 0.1IR
Min. Typ. Max. Unit
60 50 40 ...