P-Channel Silicon MOSFET
6LP04MH
Ordering number : ENA0457
6LP04MH
Features
• 1.5V drive.
P-Channel Silicon MOSFET
General-Purpose Switching D...
Description
6LP04MH
Ordering number : ENA0457
6LP04MH
Features
1.5V drive.
P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS
ID IDP PD Tch
Tstg
Conditions
PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm)
Ratings --60 ±10
--100 --400
0.6 150 --55 to +150
Unit V V mA mA W °C °C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Marking : QA
V(BR)DSS IDSS IGSS
VGS(off) yfs
RDS(on)1 RDS(on)2 RDS(on)3
Ciss
Coss
Crss
td(on) tr
td(off) tf
ID=--1mA, VGS=0V VDS=--60V, VGS=0V VGS=±8V, VDS=0V VDS=--10V, ID=--100µA VDS=--10V, ID=--50mA ID=--50mA, VGS=--4V ID=--30mA, VGS=--2.5V ID=--10mA, VGS=--1.5V VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min --60
--0.4 130
Ratings typ
max
Unit
V
--1 µA
±10 µA
--1.4 V
220 mS
6.5 8.5 Ω
7.4 11 Ω
10 20 Ω
15 pF
3.5 pF
1.0 pF
75 n...
Similar Datasheet