N-Channel Silicon MOSFET
6LN04MH
Ordering number : ENA0458
6LN04MH
Features
• 1.5V drive.
N-Channel Silicon MOSFET
General-Purpose Switching D...
Description
6LN04MH
Ordering number : ENA0458
6LN04MH
Features
1.5V drive.
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS
ID IDP PD Tch
Tstg
Conditions
PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm)
Ratings 60
±10 200 800 0.6 150 --55 to +150
Unit V V mA mA W °C °C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Marking : FA
Symbol
Conditions
V(BR)DSS IDSS IGSS
VGS(off) yfs
RDS(on)1 RDS(on)2 RDS(on)3
Ciss
Coss
Crss
td(on) tr
td(off) tf
ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=100µA VDS=10V, ID=100mA ID=100mA, VGS=4V ID=50mA, VGS=2.5V ID=10mA, VGS=1.5V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min 60
0.4 280
Ratings typ
max
Unit
V
1 µA
±10 µA
1.3 V
480 mS
2.2 2.9 Ω
2.4 3.4 Ω
3.5 7.0 Ω
26 pF
5.9 pF
3.2 pF
18.5
ns
26 ns
146 ns
69 ns
Continued on...
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