2SK3824

2SK3824 Ordering number : ENN8230 2SK3824 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Note : *1 VDD=20V, L=50µH, IAV=60A *2 L≤50µH, Single pulse Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Marking : K3824 Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0 VDS=60V, VGS=0 VGS= ±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=30A ID=30A, VGS=10V ID=30A, VGS=4V Ratings 60 ±20 60 240 1.75 60 150 --55 to +150 125 60 Unit V V A A W W °C °C mJ A min 60 1.2 24 Ratings typ max Unit V 1 µA ±10 µA 2.6 V 40 S 11.5 15 mΩ 16 22 mΩ Continued on next page. © 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com Publication Order Number: 2SK3824/D Continued from preceding page. Parameter Input Capac...