SBS818

Ordering number : ENA0471A SBS818 Schottky Barrier Diode 30V, 2A, Low VF, Non-Monolithic Dual EMH8 Common Cathode http://onsemi.com Applications High frequency rectification (switching regulators, converters, choppers) Features Low switching noise Low forward voltage (IF=2.0A, VF max=0.52V) Ultrasmall package permitting applied sets to be small and slim (Mounting height 0.75mm) Specifications Absolute Maximum Ratings at Ta=25°C (Value per element) Parameter Symbol Conditions Repetitive Peak Reverse Voltage VRRM Nonrepetitive Peak Reverse Surge Voltage VRSM Average Output Current IO Surge Forward Current Junction Temperature IFSM Tj When mounted on ceramic substrate (900mm2×0.8mm) When mounted on glass epoxy substrate (0.96mm2×0.03mm) 50Hz sine wave, 1 cycle Storage Temperature Tstg Ratings 30 30 2.0 1.5 20 --55 to +125 --55 to +125 Unit V V A A A °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7045-004 0.2 8 5 0.125 SBS818-TL-E Product & Package Information Package : EMH8 JEITA, JEDEC :- Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking 0.05 0.75 0.2 1.7 0.2 2.1 SD 1 0.5 2.0 4 1 : Anode1 2 : NC 3 : Anode2 4 : Anode2(NC) 5 : Cathode2 6 :...