BUT11AF

ON Semiconductort FULL PAKt High Voltage NPN Power Transistor For Isolated Package Applications The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art bipolar fabrication techniques to provide excellent switching, high voltage capability and low saturation voltage. 1000 Volt VCES Rating Low Base Drive Requirements Isolated Overmold Package Improved System Efficiency No Isolating Washers Required Reduced System Cost High Isolation Voltage Capability (4500 VRMS) BUT11AF POWER TRANSISTOR 5.0 AMPERES 450 VOLTS 40 WATTS CASE 221D–02 TO–220 TYPE MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Sustaining Voltage Collector–Emitter Breakdown Voltage Emitter–Base Voltage RMS Isolation Voltage (For 1 sec, TA = 25°C, Rel. Humidity < 30%) Collector Current — Continuous Collector Current — Pulsed (1) Base Current — Continuous Base Current — Pulsed (1) Total Power Dissipation @ TC = 25°C* Derated above 25°C Per Figure 7 Per Figure 8 Per Figure 9 VCEO(sus) VCES VEBO VISOL1 VISOL2 VISOL3 IC ICM IB IBM PD 450 1000 9.0 4500 3500 2500 5.0 10 2.0 4.0 40 0.32 Vdc Vdc Vdc V Adc Adc Watts W/°C Operating and Storage Temperature Range TJ, Tstg – 65 to +150 °C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case* RθJC 3.125 °C/W Maximum Lead Temperature for soldering purposes 1/8″ from case for 5 sec. TL 260 °C (1) Pulse Test: Pulse Widt...