N-Channel Power Trench MOSFET
FDD6780 N-Channel PowerTrench® MOSFET
FDD6780
N-Channel PowerTrench® MOSFET
25 V, 30 A, 8.5 mΩ
Features
General Desc...
Description
FDD6780 N-Channel PowerTrench® MOSFET
FDD6780
N-Channel PowerTrench® MOSFET
25 V, 30 A, 8.5 mΩ
Features
General Description
June 2009
Max rDS(on) = 8.5 mΩ at VGS = 10 V, ID = 16.5 A Max rDS(on) = 12.5 mΩ at VGS = 4.5 V, ID = 13.0 A 100% UIL test
RoHS Compliant
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
Applications
Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture
D
G S
D
DTO-P-2A5K2 (TO-252)
G S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed
TC = 25 °C TC = 25 °C TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a) (Note 3)
(Note 1a)
Ratings 25 ±20 30 49 16.5 70 40 33 3.7
-55 to +175
Units V V
A
mJ W °C
RθJC RθJA
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
4.5 40
°C/W
Device Marking FDD6780
Device FDD6780
Package D-PAK (TO-252)
Reel Size 13 ’’
Tape Width 12 mm
Quantity 2500 units
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