N-Channel Power Trench MOSFET
FDMS8670 N-Channel Power Trench® MOSFET
May 2009
FDMS8670
N-Channel Power Trench® MOSFET
30V, 42A, 2.6m:
tm
Feature...
Description
FDMS8670 N-Channel Power Trench® MOSFET
May 2009
FDMS8670
N-Channel Power Trench® MOSFET
30V, 42A, 2.6m:
tm
Features
General Description
Max rDS(on) = 2.6m: at VGS = 10V, ID = 24A Max rDS(on) = 3.8m: at VGS = 4.5V, ID = 18A 100% UIL Tested RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor's latest proprietary Power Trench® process that
has been especially tailored to minimize on-resistance. This part
exhibits industry leading switching FOM (RDS*Qgd) to enhance
DC-DC synchronous rectifier efficiency.
Application
DC - DC Conversion
Top Bottom Pin 1
S S S G
D D D D
Power 56
D5 D6 D7 D8
4G 3S 2S 1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed
TC = 25°C TC = 25°C TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a) (Note 3)
(Note 1a)
Ratings 30 ±20 42 135 24 150 288 78 2.5
-55 to +150
Units V V
A
mJ W °C
RTJC RTJA
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.6 50
°C/W
Device Marking FDMS8670
Device FDMS8670
Package Power 56
Reel Size 13’’
Tape Width 12 mm
Quantity 3000 units
©2009 Fairchild Semiconduct...
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