NYC228

NYC222, NYC226, NYC228 Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed and tested for repetitive peak operation required for CD ignition, fuel ignitors, flash circuits, motor controls and low-power switching applications. Features Blocking Voltage to 600 V High Surge Current − 15 A Very Low Forward “On” Voltage at High Current Low-Cost Surface Mount SOT−223 Package These are Pb−Free Devices MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) (RGK = IK, TJ = *40 to +110°C, Sine Wave, 50 to 60 Hz, Gate Open) NYC222 NYC226 NYC228 VDRM, VRRM 50 400 600 V On-State Current RMS (180° Conduction Angles, TC = 80°C) IT(RMS) 1.5 A Average On−State Current, (TC = 65°C, f = 60 Hz, Time = 1 sec) IT(RMS) 2.0 A Peak Non-repetitive Surge Current, @TA = 25°C, (1/2 Cycle, Sine Wave, 60 Hz) Circuit Fusing Considerations (t = 8.3 ms) ITSM I2t 15 A 0.9 A2s Forward Peak Gate Power (Pulse Width ≤ 1.0 msec, TA = 25°C) PGM 0.5 W Forward Average Gate Power (t = 8.3 msec, TA = 25°C) PG(AV) 0.1 W Forward Peak Gate Current (Pulse Width ≤ 1.0 ms, TA = 25°C) IFGM 0.2 A Reverse Peak Gate Voltage (Pulse Width ≤ 1.0 ms, TA = 25°C) Operating Junction Temperature Range @ Rated VRRM and VDRM VRGM 5.0 V TJ −40 to +110 °C Storage Temperature Range Tstg −40 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these ...