NTMFS4833NS

NTMFS4833NS Power MOSFET 30 V, 156 A, Single N−Channel, SO−8 FL Features Accurate, Lossless Current Sensing Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications CPU Power Delivery DC−DC Converters Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain C(Nuortreen1t)RqJA VDSS 30 V VGS ±20 V TA = 25°C ID 26 A TA = 85°C 18 Power Dissipation RqJA (Note 1) Continuous Drain C(Nuortreen2t)RqJA Power Dissipation RqJA (Note 2) Continuous Drain C(Nuortreen1t)RqJC Steady State TA = 25°C TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C PD ID PD ID 2.31 W 16 A 11.6 0.9 W 156 A 113 Power Dissipation RqJC (Note 1) TC = 25°C Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature PD IDM TJ, TSTG 86.2 312 −55 to +150 W A °C Source Current (Body Diode) Drain to Source DV/DT IS dV/dt 86 A 6 V/ns Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 30 V, VGS = 10 V, IL = 35 Apk, L = 1.0 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) EAS TL 612.5 mJ 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should ...