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MTB3N60E

ON Semiconductor
Part Number MTB3N60E
Manufacturer ON Semiconductor
Description High Energy Power FET
Published Jan 21, 2016
Detailed Description MTB3N60E Product Preview TMOS E−FET.™ High Energy Power FET D2PAK for Surface Mount N−Channel Enhancement−Mode Silicon G...
Datasheet PDF File MTB3N60E PDF File

MTB3N60E
MTB3N60E

Overview
MTB3N60E Product Preview TMOS E−FET.
™ High Energy Power FET D2PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate This advanced high voltage TMOS E−FET is designed to withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain−to−source diode with fast recovery time.
Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Capability Specified at ...


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