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SMUN5313DW1 Dataheets PDF



Part Number SMUN5313DW1
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Complementary Bias Resistor Transistors
Datasheet SMUN5313DW1 DatasheetSMUN5313DW1 Datasheet (PDF)

MUN5313DW1, SMUN5313DW1, NSBC144EPDXV6, NSBC144EPDP6 Complementary Bias Resistor Transistors R1 = 47 kW, R2 = 47 kW NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these ind.

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MUN5313DW1, SMUN5313DW1, NSBC144EPDXV6, NSBC144EPDP6 Complementary Bias Resistor Transistors R1 = 47 kW, R2 = 47 kW NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. Features • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C both polarities Q1 (PNP) & Q2 (NPN), unless otherwise noted) Rating Symbol Max Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc Collector Current − Continuous IC 100 mAdc Input Forward Voltage VIN(fwd) 40 Vdc Input Reverse Voltage VIN(rev) 10 Vdc Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ORDERING INFORMATION Device Package Shipping† MUN5313DW1T1G, SMUN5313DW1T1G SOT−363 3,000/Tape & Reel SMUN5313DW1T3G SOT−363 10,000/Tape & Reel NSBC144EPDXV6T1G NSVB144EPDXV6T1G SOT−563 4,000/Tape & Reel NSBC144EPDXV6T5G SOT−563 8,000/Tape & Reel NSBC144EPDP6T5G SOT−963 8,000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2012 November, 2012 − Rev. 1 1 http://onsemi.com PIN CONNECTIONS (3) (2) (1) R1 Q1 R2 R1 (4) (5) R2 Q2 (6) MARKING DIAGRAMS SOT−363 CASE 419B 6 13 M G G 1 SOT−563 CASE 463A 13 M G G 1 SOT−963 CASE 527AD K MG 1G 13/K M G = Specific Device Code = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. Publication Order Number: DTC144EP/D MUN5313DW1, SMUN5313DW1, NSBC144EPDXV6, NSBC144EPDP6 THERMAL CHARACTERISTICS Characteristic Symbol MUN5313DW1 (SOT−363) ONE JUNCTION HEATED Total Device Dissipation TA = 25°C Derate above 25°C (Note 1) (Note 2) (Note 1) (Note 2) PD Thermal Resistance, Junction to Ambient (Note 1) (Note 2) RqJA MUN5313DW1 (SOT−363) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation TA = 25°C Derate above 25°C (Note 1) (Note 2) (Note 1) (Note 2) PD Thermal Resistance, Junction to Ambient (Note 1) (Note 2) RqJA Thermal Resistance, Junction to Lead (Note 1) (Note 2) RqJL Junction and Storage Temperature Range NSBC144EPDXV6 (SOT−563) ONE JUNCTION HEATED TJ, Tstg Total Device Dissipation TA = 25°C Derate above 25°C (Note 1) (Note 1) PD Thermal Resistance, Junction to Ambient (Note 1) RqJA NSBC144EPDXV6 (SOT−563) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation TA = 25°C Derate above 25°C (Note 1) (Note 1) PD Thermal Resistance, Junction to Ambient (Note 1) RqJA Junction and Storage Temperature Range NSBC144EPDP6 (SOT−963) ONE JUNCTION HEATED TJ, Tstg Total Device Dissipation TA = 25°C Derate above 25°C (Note 4) (Note 5) (Note 4) (Note 5) PD Thermal Resistance, Junction to Ambient (Note 4) (Note 5) RqJA NSBC144EPDP6 (SOT−963) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation TA = 25°C Derate above 25°C (Note 4) (Note 5) (Note 4) (Note 5) PD Thermal Resistance, Junction to Ambient (Note 4) (Note 5) RqJA Junction and Storage Temperature Range TJ, Tstg 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 × 1.0 Inch Pad. 3. Both junction heated values assume total power is sum of two equally powered channels. 4. FR−4 @ 100 mm2, 1 oz. copper traces, still air. 5. FR−4 @ 500 mm2, 1 oz. copper traces, still air. Max 187 256 1.5 2.0 670 490 250 385 2.0 3.0 493 325 188 208 −55 to +150 357 2.9 350 500 4.0 250 −55 to +150 231 269 1.9 2.2 540 464 339 408 2.7 3.3 369 306 −55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C/W °C mW mW/°C °C/W mW mW/°C °C/W °C MW mW/°C °C/W MW mW/°C °C/W °C http://onsemi.com 2 MUN5313DW1, SMUN5313DW1, NSBC144EPDXV6, NSBC144EPDP6 ELECTRICAL CHARACTERISTICS (TA = 25°C both polarities Q1 (PNP) & Q2 (NPN), unless otherwise noted) Characteristic Symbol Min Typ Max OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO − − 0.1 Collector-Ba.


MUN5313DW1 SMUN5313DW1 NSBC144EPDXV6


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