Document
MUN5313DW1, SMUN5313DW1, NSBC144EPDXV6, NSBC144EPDP6
Complementary Bias
Resistor Transistors
R1 = 47 kW, R2 = 47 kW
NPN and PNP Transistors with Monolithic Bias Resistor Network
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Features
• Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C both polarities Q1 (PNP) & Q2 (NPN), unless otherwise noted)
Rating
Symbol
Max
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current − Continuous IC 100 mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
10
Vdc
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
Package
Shipping†
MUN5313DW1T1G, SMUN5313DW1T1G
SOT−363
3,000/Tape & Reel
SMUN5313DW1T3G
SOT−363 10,000/Tape & Reel
NSBC144EPDXV6T1G NSVB144EPDXV6T1G
SOT−563
4,000/Tape & Reel
NSBC144EPDXV6T5G
SOT−563
8,000/Tape & Reel
NSBC144EPDP6T5G
SOT−963
8,000/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
November, 2012 − Rev. 1
1
http://onsemi.com PIN CONNECTIONS
(3) (2) (1)
R1 Q1
R2 R1 (4) (5)
R2 Q2 (6)
MARKING DIAGRAMS
SOT−363 CASE 419B
6
13 M G G
1
SOT−563 CASE 463A
13 M G G
1
SOT−963 CASE 527AD
K
MG 1G
13/K M
G
= Specific Device Code = Date Code* = Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon manufacturing location.
Publication Order Number: DTC144EP/D
MUN5313DW1, SMUN5313DW1, NSBC144EPDXV6, NSBC144EPDP6
THERMAL CHARACTERISTICS
Characteristic
Symbol
MUN5313DW1 (SOT−363) ONE JUNCTION HEATED
Total Device Dissipation TA = 25°C Derate above 25°C
(Note 1) (Note 2) (Note 1) (Note 2)
PD
Thermal Resistance, Junction to Ambient
(Note 1) (Note 2)
RqJA
MUN5313DW1 (SOT−363) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation TA = 25°C Derate above 25°C
(Note 1) (Note 2) (Note 1) (Note 2)
PD
Thermal Resistance, Junction to Ambient
(Note 1) (Note 2)
RqJA
Thermal Resistance, Junction to Lead
(Note 1) (Note 2)
RqJL
Junction and Storage Temperature Range NSBC144EPDXV6 (SOT−563) ONE JUNCTION HEATED
TJ, Tstg
Total Device Dissipation TA = 25°C Derate above 25°C
(Note 1) (Note 1)
PD
Thermal Resistance, Junction to Ambient
(Note 1)
RqJA
NSBC144EPDXV6 (SOT−563) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation TA = 25°C Derate above 25°C
(Note 1) (Note 1)
PD
Thermal Resistance, Junction to Ambient
(Note 1)
RqJA
Junction and Storage Temperature Range NSBC144EPDP6 (SOT−963) ONE JUNCTION HEATED
TJ, Tstg
Total Device Dissipation TA = 25°C Derate above 25°C
(Note 4) (Note 5) (Note 4) (Note 5)
PD
Thermal Resistance, Junction to Ambient
(Note 4) (Note 5)
RqJA
NSBC144EPDP6 (SOT−963) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation TA = 25°C Derate above 25°C
(Note 4) (Note 5) (Note 4) (Note 5)
PD
Thermal Resistance, Junction to Ambient
(Note 4) (Note 5)
RqJA
Junction and Storage Temperature Range
TJ, Tstg
1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 × 1.0 Inch Pad. 3. Both junction heated values assume total power is sum of two equally powered channels. 4. FR−4 @ 100 mm2, 1 oz. copper traces, still air. 5. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
Max
187 256 1.5 2.0 670 490
250 385 2.0 3.0 493 325 188 208 −55 to +150
357 2.9 350
500 4.0 250 −55 to +150
231 269 1.9 2.2 540 464
339 408 2.7 3.3 369 306 −55 to +150
Unit
mW mW/°C °C/W
mW mW/°C °C/W °C/W
°C
mW mW/°C °C/W
mW mW/°C °C/W
°C
MW mW/°C °C/W
MW mW/°C °C/W
°C
http://onsemi.com 2
MUN5313DW1, SMUN5313DW1, NSBC144EPDXV6, NSBC144EPDP6
ELECTRICAL CHARACTERISTICS (TA = 25°C both polarities Q1 (PNP) & Q2 (NPN), unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
− 100
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
−
− 500
Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0)
IEBO
−
− 0.1
Collector-Ba.