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2SC6082 Dataheets PDF



Part Number 2SC6082
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Bipolar Transistor
Datasheet 2SC6082 Datasheet2SC6082 Datasheet (PDF)

Ordering number : ENA0279B 2SC6082 Bipolar Transistor 50V, 15A, Low VCE (sat) NPN TO-220F-3SG http://onsemi.com Applications • High-speed switching applications (switching regulator, driver circuit) Features • Adoption of MBIT process • Low collector-to-emitter saturation voltage • Large current capacitance • High-speed switching Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Cu.

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Ordering number : ENA0279B 2SC6082 Bipolar Transistor 50V, 15A, Low VCE (sat) NPN TO-220F-3SG http://onsemi.com Applications • High-speed switching applications (switching regulator, driver circuit) Features • Adoption of MBIT process • Low collector-to-emitter saturation voltage • Large current capacitance • High-speed switching Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current VCBO VCES VCEO VEBO IC ICP IB Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 60 60 50 6 15 20 3 2 23 150 --55 to +150 Unit V V V V A A A W W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 15.8 3.23 Package Dimensions unit : mm (typ) 7529-002 10.16 3.18 1.47 MAX 0.8 123 2.54 2.54 12.98 3.3 15.87 6.68 4.7 2.54 2SC6082-1E A 2.76 DETAIL-A (0.84) 0.5 1 : Base FRAME 2 : Collector EMC 3 : Emitter TO-220F-3SG ( 1.0) Product & Package Information • Package : TO-220F-3SG • JEITA, JEDEC : SC-67 • Minimum Packing Quantity : 50 pcs./magazine Marking Electrical Connection 2 C6082 LOT No. 1 3 Semiconductor Components Industries, LLC, 2013 September, 2013 60612 TKIM/12512 TKIM TC-00002709/72606/31506FA MSIM TB-00002089 No. A0279-1/7 2SC6082 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf VCB=40V, IE=0A VEB=4V, IC=0A VCE=2V, IC=330mA VCE=2V, IC=10A VCE=10V, IC=2A VCB=10V, f=1MHz IC=7.5A, IB=375mA IC=7.5A, IB=375mA IC=100μA, IE=0A IC=100μA, RBE=0Ω IC=1mA, RBE=∞ IE=100μA, IC=0A See specified Test Circuit Switching Time Test Circuit PW=20μs D.C.≤1% IB1 IB2 INPUT VR RB 50Ω + 100μF VBE= --5V IC=20IB1= --20IB2=5A OUTPUT RL + 470μF VCC=25V Ratings min typ 200 50 195 85 200 60 60 50 6 52 560 37 max 10 10 560 400 1.2 Unit μA μA MHz pF mV V V V V V ns ns ns Ordering Information Device 2SC6082-1E Package TO-220F-3SG Shipping 50pcs./magazine memo Pb Free No. A0279-2/7 2SC6082 Collector Current, IC -- A 15 14 From a top 300mA 13 250mA 12 200mA 11 180mA 150mA 10 120mA 9 100mA IC -- VCE 50mA 40mA 30mA 8 7 20mA 6 5 90mA 80mA 70mA 60mA 10mA 4 3 2 1 0 IB=0mA 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 16 Collector-to-Emitter IC -- Voltage, VBE VCE -- V IT10574 VCE=2V 14 12 10 8 6 --225T5a°°=CC75°C 4 2 0 0 1000 7 5 3 2 0.2 0.4 0.6 0.8 1.0 1.2 Base-to-Emitter Voltage, hFE -- IC VBE -- V IT10576 Ta=25°C V CE =2.0V DC Current Gain, hFE Collector Current, IC -- A 10 9 8 7 6 5 4 3 2 1 0 0 1000 7 5 3 2 100mA 70mA 80mA 90mA 60mA IC -- VCE 50mA 40mA 30mA 20mA 15mA 10mA 5mA IB=0mA 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Collector-to-Emitter Voltage, hFE -- IC VCE -- V IT10575 VCE=2V Ta=75°C 25°C --25°C 100 7 5 3 2 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 1000 CollectofrTCu-r-renItC, IC -- A IT10577 7 VCE=10V 5 3 2 Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz DC Current Gain, hFE 1.0V 0.7V 0.5V 0.2V Output Capacitance, Cob -- pF 100 7 5 3 2 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 1000 ColleCctoobr Cu-r-renVt,CICB -- A IT10578 7 f=1MHz 5 3 2 100 7 5 3 2 10 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 57 Collector-to-Base Voltage, VCB -- V IT10580 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 100 7 5 3 2 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 ColVleCctoEr(Csuartr)ent-,-ICIC-- A IT10579 7 5 IC / IB=20 3 2 0.1 7 5 3 2 Ta=75°C --25°C 0.01 25°C 7 5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 23 Collector Current, IC -- A IT10581 No. A0279-3/7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector Current, IC -- A 7 5 IC / IB=50 3 2 VCE(sat) -- IC 2SC6082 --25°C 0.1 7 5 Ta=75°C 3 2 25°C 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector Current, Forward Bias IAC -- S A O IT10582 100 7 5 P 3 2 ICP=20A 10 7 IC=15A 5 3 2 100ms DC operati1o0nms T=500μ1ms s S/B Limit 1.0 7 5 3 2 0.1 7 5 3 2 Tc=25°C 0.01 Single pulse 0.1 2 3 5 7 1.0 2 3 5 7 10 23 25 Collector-to-Emitter Voltage, PC -- Tc VCE -- V 5 7 100 IT16709 23 20 Collector Dissipation, PC -- W Base-to-Emitter Saturation Voltage, VBE(sat) -- V VBE(sat) -- IC 3 IC / IB=20 2 1.0 Ta=.


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