KST1623L3/L4/L5/L6/L7
KST1623L3/L4/L5/L6/L7
Amplifier Transistor
NPN Epitaxial Silicon Transistor
Absolute Maximum Ra...
KST1623L3/L4/L5/L6/L7
KST1623L3/L4/L5/L6/L7
Amplifier
Transistor
NPN Epitaxial Silicon
Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO VCEO VEBO IC PC TSTG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature
2
1 SOT-23 1. Base 2. Emitter 3. Collector
Value 50 40 5.0 100 350 150
Units V V V mA
mW °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICBO IEBO hFE
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
: KST1623L3 : KST1623L4 : KST1623L5 : KST1623L6 : KST1623L7
VCB =40V, IE=0 VEB=5V, IC=0
VCE=6V, IC=1.0mA
VCE (sat) VBE (sat) VBE (on) fT
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product
IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=6V, IC=1.0mA IC=10mA, VCE=6V, f=100MHz
Min.
60 90 135 200 300
0.6 200
Max. 100 100
Units nA nA
120 180 270 400 600
0.3 V
1.0 V
0.7 V
MHz
MARKING CODE
Type Mark
KST1623L3 L3
KST1623L4 L4
KST1623L5 L5
KST1623L6 L6
KST1623L7 L7
Marking
L3
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Typical Characteristics
IC[A], COLLECTOR CURRENT
100 80 60 40 20 0 0
IB = 400µA IB = 350µA IB = 300µA IB = 250µA IB = 200µA IB = 150µA IB = 100µA
IB = 50µA
4 8 12 16 20
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
10k
VCE = 6V
1k
100
10 1 ...