KST1623L3

KST1623L3/L4/L5/L6/L7 KST1623L3/L4/L5/L6/L7 Amplifier Transistor NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter VCBO VCEO VEBO IC PC TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature 2 1 SOT-23 1. Base 2. Emitter 3. Collector Value 50 40 5.0 100 350 150 Units V V V mA mW °C Electrical Characteristics Ta=25°C unless otherwise noted
Symbol Parameter Test Condition ICBO IEBO hFE Collector Cut-off Current Emitter Cut-off Current DC Current Gain : KST1623L3 : KST1623L4 : KST1623L5 : KST1623L6 : KST1623L7 VCB =40V, IE=0 VEB=5V, IC=0 VCE=6V, IC=1.0mA VCE (sat) VBE (sat) VBE (on) fT Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=6V, IC=1.0mA IC=10mA, VCE=6V, f=100MHz Min. 60 90 135 200 300 0.6 200 Max. 100 100 Units nA nA 120 180 270 400 600 0.3 V 1.0 V 0.7 V MHz MARKING CODE Type Mark KST1623L3 L3 KST1623L4 L4 KST1623L5 L5 KST1623L6 L6 KST1623L7 L7 Marking L3 ©2000 Fairchild Semiconductor International Rev. A, February 2000 Typical Characteristics IC[A], COLLECTOR CURRENT 100 80 60 40 20 0 0 IB = 400µA IB = 350µA IB = 300µA IB = 250µA IB = 200µA IB = 150µA IB = 100µA IB = 50µA 4 8 12 16 20 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic 10k VCE = 6V 1k 100 10 1 ...