SSF6808

SSF6808 68V N-Channel MOSFET FEATURES  Advanced trench process technology  Ultra low Rdson, typical 6mohm  High avalanche energy, 100% test  Fully characterized avalanche voltage and current  Lead free product ID =84A BV=68V R DS (ON) =8mohm DESCRIPTION The SSF6808 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF6808 is assembled in high reliability and qualified assembly house. APPLICATIONS  Power switching application SSF6808 Top View (TO-220) Absolute Maximum Ratings Parameter I DB @T B B c =25ْ B C Continuous drain current,VGS@10V I B D @T cB B =100Cْ B Continuous drain current,VGS@10V IDMB B Pulsed drain current ① Power dissipation P B D @T CB B =25ْC B Linear derating factor V GSB B dv/dt Gate-to-Source voltage Peak diode recovery voltage E ASB B E ARB B T JB B T STGB B Single pulse avalanche energy ② Repetitive avalanche energy Operating Junction and Storage Temperature Range Max. 84 76 310 181 1.5 ±20 31 400 TBD –55 to +175 Units A W W/ْ C V v/ns mJ ْC Thermal Resistance Parameter R θJCB B R θJAB B Junction-to-case Junction-to-ambient Min. — — Typ. 0.83 — Max. — 62 Units ْC/W Electrical Characteristics @TJ=25 ْC (unless otherwise specified) Parameter Min. Typ. BV DSSB B RBDS(on)B VBGS(th)B Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate thre...