SSF5508

Main Product Characteristics VDSS 55V RDS(on) 4.5mohm(typ.) ID 110A Features and Benefits TO-220  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature  Lead free product SSF5508 55V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAR TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.3mH② Avalanche Current @ L=0.3mH② Operating Junction and Storage Temperature Range Max. 110 80 440 205 2.0 55 ± 20 375 50 -55 to +175 Units A W W/°C V V mJ A °C www.goodark.com Page 1 of 7 Rev.4.2 SSF5508 55V N-Channel MOSFET Thermal Resistance Symbol RθJC RθJA Characteristics Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④ Typ. — ...