Document
Ordering number : ENN7671
2SK3738
N-Channel Junction Silicon FET
2SK3738
Impedance Converter Applications
Application
• Impedance conversion. • Infrared sensor.
www.DataSheetF4Ue.acotmures
• Small IGSS. • Small Ciss. • Ultrasmall package permitting applied sets to be
small and slim.
Package Dimensions
unit : mm 2124
[2SK3738] 0.75
0.3 0.6 3
0~0.1
12
0.5 0.5 1.6
0.2
0.1
0.4 0.8 0.4 1.6
0.1max
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature
Symbol
VDSS VGDS
IG ID PD Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Cutoff Voltage Zero-Gate Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Marking : KB
Symbol
Conditions
V(BR)GDS IGSS
VGS(off) IDSS yfs Ciss
Crss
IG=--10µA, VDS=0 VGS=--20V, VDS=0 VDS=10V, ID=1µA VDS=10V, VGS=0 VDS=10V, VGS=0, f=1kHz VDS=10V, VGS=0, f=1MHz VDS=10V, VGS=0, f=1MHz
1 : Source 2 : Drain 3 : Gate
SANYO : SMCP
Ratings 40 --40 10 1
100 150 --55 to +150
Unit V V mA mA
mW °C °C
min --40
Ratings typ
50 0.06
--1.5
0.13 1.7 0.7
max
--500 --2.3 130
Unit
V pA V µA mS pF pF
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42004GB TS IM TA-100829 No.7671-1/3
140 120 100
80 60 40 20
0
www.DataSheet4U.com 0
--1.2 3 2
Drain Current, ID -- µA
ID -- VDS
2SK3738
140
VGS=0
--0.2V
--0.4V
--0.6V
--0.8V
--1.0V
--1.2V --1.4V
1 234 5
Drain-to-Source Voltage, VDS -- V ITR00837
ID -- VGS
80
VDS=10V
IDSS=50µA 70
60
--25°C
50
Ta=25°C
40
75°C 30
20
10
--1.0 --0.8 --0.6 --0.4 --0.2
0 0
Gate-to-Source Voltage, VGS -- V ITR00839
VGS(off) -- IDSS
VDS=10V ID=1µA
Drain Current, ID -- µA
Drain Current, ID -- µA
120 100
80 60 40 20
0 0
--2.4 3 2
ID -- VDS
VGS=0
--0.2V
--0.4V
--0.6V
--0.8V --1.0V
--1.2V
--1.4V
4 8 12 16 20
Drain-to-Source Voltage, VDS -- V ITR00838
ID -- VGS
160
VDS=10V
IDSS=100µA 140
120
--25°C
100
80
Ta=25°C 75°C
60
40
20
--2.0 --1.6 --1.2 .