PMBT6429

DISCRETE SEMICONDUCTORS DATA SHEET PMBT6428; PMBT6429 NPN general purpose transistors Product data sheet Supersedes data of 1999 Apr 27 2004 Jan 22 NXP Semiconductors NPN general purpose transistors Product data sheet PMBT6428; PMBT6429 FEATURES Low current (max. 100 mA) Low voltage (max. 50 V). APPLICATIONS General purpose switching and amplification Telephony and professional communication equipment. PINNING PIN 1 2 3 base emitter collector DESCRIPTION DESCRIPTION NPN transistor in a SOT23 plastic package. MARKING TYPE NUMBER PMBT6428 PMBT6429 MARKING CODE(1) *1K *1L Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. handbook, halfpage 3 3 1 1 Top view 2 MAM255 2 Fig.1 Simplified outline SOT23 and symbol. ORDERING INFORMATION TYPE NUMBER PMBT6428 PMBT6429 NAME − PACKAGE DESCRIPTION plastic surface mounted package; 3 leads VERSION SOT23 2004 Jan 22 2 NXP Semiconductors NPN general purpose transistors Product data sheet PMBT6428; PMBT6429 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage PMBT6428 PMBT6429 collector-emitter voltage PMBT6428 PMBT6429 emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector Tamb ≤ 25 °C;...