DatasheetsPDF.com

PJD8NA50

Pan Jit International

500V N-Channel MOSFET

PPJU8NA50 / PJD8NA50 / PJP8NA50 / PJF8NA50 500V N-Channel MOSFET Voltage 500 V Current 8A Features  RDS(ON), VGS@1...


Pan Jit International

PJD8NA50

File Download Download PJD8NA50 Datasheet


Description
PPJU8NA50 / PJD8NA50 / PJP8NA50 / PJF8NA50 500V N-Channel MOSFET Voltage 500 V Current 8A Features  RDS(ON), VGS@10V,ID@4A<0.9Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: TO-251AA,TO-252AA ,TO-220AB, ITO-220AB-F Package  Terminals : Solderable per MIL-STD-750, Method 2026  TO-251AA Approx. Weight : 0.0104 ounces, 0.297grams  TO-252AA Approx. Weight : 0.0104 ounces, 0.297grams  TO-220AB Approx. Weight : 0.067 ounces, 1.9 grams  ITO-220AB-F Approx. Weight : 0.068 ounces, 2 grams ITO-220AB-F TO-220AB TO-252AA TO-251AA Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER SYMBOL TO-251AA Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Avalanche Energy (Note 1) Power Dissipation TC=25oC Derate above 25oC Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Case - Junction to Ambient VDS VGS ID IDM EAS PD TJ,TSTG RθJC RθJA 130 1.04 0.96 110 TO-220AB ITO-220AB-F TO-252AA UNITS 500 +30 8 32 512 134 49 1.07 0.39 130 1.04 V V A A mJ W W/ oC -55~150 oC 0.93 2.55 0.96 oC/W 62.5 120 110  Limited only By Maximum Junction Temperature March 10,2014-REV.00 Page 1 PPJU8NA50 / PJD8NA50 / PJP8NA50 / PJF8NA50 ...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)