PPJE138L
60V N-Channel Enhancement Mode MOSFET
Voltage
60 V
Current 160mA
Features
RDS(ON) , VGS@10V, ID@160mA<4...
PPJE138L
60V N-Channel Enhancement Mode MOSFET
Voltage
60 V
Current 160mA
Features
RDS(ON) , VGS@10V, ID@160mA<4.2Ω RDS(ON) ,
[email protected], ID@100mA<5Ω RDS(ON) ,
[email protected], ID@50mA<7Ω Advanced Trench Process Technology ESD Protected Specially Designed for Relay driver, Speed line drive, etc. Lead free in compliance with EU RoHS 2011/65/EU
directive. Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-523 Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.00007 ounces, 0.002 grams Marking: E8L
SOT-523
Unit : inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current Power Dissipation
TA=25oC Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance - Junction to Ambient (Note 3)
SYMBOL VDS VGS ID IDM
PD
TJ,TSTG
RθJA
LIMIT 60 +20 160 800 223 1.8
-55~150
560
UNITS V V mA mA
mW mW/ oC
oC
oC/W
March 27,2015-REV.01 `
Page 1
PPJE138L
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 4) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time...