NTP4813NL

NTP4813NL Power MOSFET 30 V, 51 A, Single N−Channel, TO−220AB Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These Devices are Pb−Free and are RoHS Compliant Applications Power Motor Control High Current, High Side Switching DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) TA = 25°C TA = 85°C VDSS VGS ID 30 ±20 12.8 9.9 V V A Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) TA = 25°C Steady State TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C PD ID PD ID 3.75 W 10.2 A 7.9 2.40 W 51 A 39.5 Power Dissipation RqJC (Note 1) Pulsed Drain Current TC = 25°C tp=10ms TA = 25°C PD IDM 60 W 154 A Current Limited by Package TA = 25°C Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt IDmaxPkg TJ, TSTG IS dV/dt 95 −55 to +175 50 6 A °C A V/ns Single Pulse Drain−to−Source Avalanche Energy (VDD = 24 V, VGS = 10 V, IL = 18 Apk, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) EAS 48.6 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionalit...