STB4410 STP4410Green
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transi...
STB4410 STP4410Green
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
100V 75A 7.0 @ VGS=10V
FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.
D
G S
S TB S E R IE S T O -263(DD-P AK )
G D S
S TP S E R IE S TO-220
D
G S
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
Limit
VDS Drain-Source Voltage VGS Gate-Source Voltage
100 ±20
ID
Drain Current-Continuous c
TC=25°C TC=70°C
75 63
IDM -Pulsed a c
390
EAS Avalanche Energy d
576
TC=25°C PD Maximum Power Dissipation
TC=70°C
75 52.5
TJ, TSTG
Operating Junction and Storage Temperature Range
-55 to 175
THERMAL CHARACTERISTICS
R JC R JA
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
2 62.5
Units V V A A A mJ W W
°C
°C/W °C/W
Details are subject to change without notice.
1
Dec,26,2014
www.samhop.com.tw
STB4410 STP4410
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body leakage current
VGS=0V , ID=250uA VDS=80V , VGS=0V VGS= ±20V , VDS=0V
100
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) gFS
Drain-Source On-State Resistance Forward Transconductance
DYNAMIC CHARACTERISTICS b
...