STB4410

STB4410 STP4410Green Product Sa mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 100V 75A 7.0 @ VGS=10V FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D G S S TB S E R IE S T O -263(DD-P AK ) G D S S TP S E R IE S TO-220 D G S ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter Limit VDS Drain-Source Voltage VGS Gate-Source Voltage 100 ±20 ID Drain Current-Continuous c TC=25°C TC=70°C 75 63 IDM -Pulsed a c 390 EAS Avalanche Energy d 576 TC=25°C PD Maximum Power Dissipation TC=70°C 75 52.5 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 175 THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2 62.5 Units V V A A A mJ W W °C °C/W °C/W Details are subject to change without notice. 1 Dec,26,2014 www.samhop.com.tw STB4410 STP4410 Ver 1.0 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) 4 Symbol Parameter Conditions Min OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS=0V , ID=250uA VDS=80V , VGS=0V VGS= ±20V , VDS=0V 100 ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance DYNAMIC CHARACTERISTICS b ...