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FGPF15N60UNDF Dataheets PDF



Part Number FGPF15N60UNDF
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Short Circuit Rated IGBT
Datasheet FGPF15N60UNDF DatasheetFGPF15N60UNDF Datasheet (PDF)

FGPF15N60UNDF — 600 V, 15 A Short Circuit Rated IGBT FGPF15N60UNDF 600 V, 15 A Short Circuit Rated IGBT Features • Short Circuit Rated 10us • High Current Capability • High Input Impedance • Fast Switching • RoHS Compliant September 2013 General Description Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverterdriven applications where low-losses and short-circuit ruggedness features are essential, such as sewing machine, CNC, motor c.

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FGPF15N60UNDF — 600 V, 15 A Short Circuit Rated IGBT FGPF15N60UNDF 600 V, 15 A Short Circuit Rated IGBT Features • Short Circuit Rated 10us • High Current Capability • High Input Impedance • Fast Switching • RoHS Compliant September 2013 General Description Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverterdriven applications where low-losses and short-circuit ruggedness features are essential, such as sewing machine, CNC, motor control and home appliances. Applications • Sewing Machine, CNC, Home Appliances, Motor Control C GCE TO-220F (Retractable) Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF PD TJ Tstg Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Forward Current Diode Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range @ TC = 25oC @ TC = 100oC @ TC = 25oC @ TC = 25oC @ TC = 100oC @ TC = 25oC @ TC = 100oC Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature G E Ratings 600 ± 20 30 15 45 15 7.5 42 17 -55 to +150 -55 to +150 Thermal Characteristics Symbol RθJC(IGBT) RθJC(Diode) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (PCB Mount)(2) Notes: 2: Mountde on 1” square PCB (FR4 or G-10 material) ©2012 Fairchild Semiconductor Corporation FGPF15N60UNDF Rev. C2 1 Typ. - Max. 3.0 4.9 62.5 Unit V V A A A A A W W oC oC Unit oC/W oC/W oC/W www.fairchildsemi.com FGPF15N60UNDF — 600 V, 15 A Short Circuit Rated IGBT Package Marking and Ordering Information Device Marking Device FGPF15N60UNDF FGPF15N60UNDF Package TO-220F Reel Size - Tape Width - Quantity 50ea Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BVCES ICES IGES Collector to Emitter Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0 V, IC = 250 μA VCE = VCES, VGE = 0 V VGE = VGES, VCE = 0 V On Characteristics VGE(th) G-E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage IC = 15 mA, VCE = VGE IC = 15 A, VGE = 15 V IC = 15 A, VGE = 15 V, TC = 125oC Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1MHz Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Tsc Short Circuit Withstand Time VCC = 400 V, IC = 15 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 25oC VCC = 400 V, IC = 15 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 125oC VCC = 350 V, RG = 100 Ω, VGE = 15 V, TC = 150oC 600 - - V - - 1 mA - - ±10 μA 5.5 6.8 8.5 - 2.2 2.7 - 2.7 - V V V - 619 - 80 - 24 - pF pF pF - 9.3 - ns - 9.8 - ns - 54.8 - ns - 9.9 12.8 ns - 0.37 - mJ - 0.067 - mJ - 0.44 - mJ - 8.9 - ns - 9.9 - ns - 56.6 - ns - 13.2 - ns - 0.54 - mJ - 0.11 - mJ - 0.65 - mJ 10 - - μs ©2012 Fairchild Semiconductor Corporation FGPF15N60UNDF Rev. C2 2 www.fairchildsemi.com FGPF15N60UNDF — 600 V, 15 A Short Circuit Rated IGBT Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge VCE = 400 V, IC = 15 A, VGE = 15 V - 43 - nC - 6 - nC - 26 - nC Electrical Characteristics of the Diode TC = 25°C unless otherwise noted Symbol Parameter Test Conditions VFM Diode Forward Voltage IF = 15 A TC = 25oC TC= 125oC trr Qrr Diode Reverse Recovery Time IF =15 A, dIF/dt = 200 A/μs Diode Reverse Recovery Charge TC = 25oC TC= 125oC TC = 25oC TC= 125oC Min. - Typ. 1.6 1.5 82.4 142 213 541 Max 2.2 - Unit V ns - - nC - ©2012 Fairchild Semiconductor Corporation FGPF15N60UNDF Rev. C2 3 www.fairchildsemi.com FGPF15N60UNDF — 600 V, 15 A Short Circuit Rated IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 80 TC = 25oC 70 60 20V 17V 15V Collector Current, IC [A] 50 VGE =12V 40 30 20 10 0 0.0 1.5 3.0 4.5 6.0 7.5 9.0 Collector-Emitter Voltage, VCE [V] Figure 2. Typical Output Characteristics 80 TC = 125oC 70 60 20V 17V 15V Collector Current, IC [A] 50 40 VGE = 12V 30 20 10 0 0.0 1.5 3.0 4.5 6.0 7.5 9.0 Collector-Emitter Voltage, VCE [V] Figure 3. Typical Saturation Voltage Characteristics 80 70 Common Emitter VGE = 15V 60 TC = 25oC TC = 125oC 50 Collector Current, IC [A] 40 30 20 10 0 012345 Collector-Emitter Voltage, VCE [V] 6 Collector Current, IC [A] Figure 4. Transfer Characteristics 80 Common Emitter 70 VCE = 20V TC =.


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