NVMFS5C670NL

DATA SHEET www.onsemi.com MOSFET - Power, Single N-Channel, DFN5/DFNW5 60 V, 6.1 mW, 71 A V(BR)DSS 60 V RDS(ON) MAX 6.1 mW @ 10 V 8.8 mW @ 4.5 V ID MAX 71 A NVMFS5C670NL Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5C670NLWF − Wettable Flank Option for Enhanced Optical Inspection AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant D (5,6) G (4) S (1,2,3) N−CHANNEL MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady TC = 100°C State TC = 25°C PD TC = 100°C 71 A 50 61 W 31 Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA (Notes 1 & 2) TA = 25°C ID Steady TA = 100°C State TA = 25°C PD TA = 100°C 17 A 12 3.6 W 1.8 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 440 A Operating Junction and Storage Temperature TJ, Tstg − 55 to °C + 175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 3.6 A) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS 68 A EAS 166 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should no...