NVMFS5833N

NVMFS5833N Power MOSFET 40 V, 7.5 mW, 86 A, Single N−Channel, SO−8FL Features Low RDS(on) Low Capacitance Optimized Gate Charge AEC−Q101 Qualified and PPAP Capable NVMFS5833NWF − Wettable Franks Option for Enhanced Optical Inspection These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RYJ−mb (Notes 1, 2, 3 & 4) Power Dissipation RYJ−mb (Notes 1, 2, 3) Steady State Tmb = 25°C Tmb = 100°C Tmb = 25°C Tmb = 100°C Continuous Drain Current RqJA (Notes 1, 3 & 4) Power Dissipation RqJA (Notes 1 & 3) Steady State TA = 25°C TA = 100°C TA = 25°C TA = 100°C Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature VDSS VGS ID PD ID PD IDM TJ, Tstg 40 "20 86 61 112 56 16 11 3.7 1.8 324 −55 to 175 V V A W A W A °C Source Current (Body Diode) IS 86 A Single Pulse Drain−to−Source Avalanche EAS 65 mJ Energy (TJ = 25°C, IL(pk) = 36 A, L = 0.1 mH) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Mounting Board (top) − Steady State (Notes 2, 3) RYJ−mb 1.3 °C/W Junction...