NTP5N60

NTP5N60 Preferred Devices Product Preview Power MOSFET 5 Amps, 600 Volts N−Channel TO−220 Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. Features Higher Current Rating Lower RDS(on) Lower Capacitances Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified Typical Applications Switch Mode Power Supplies PWM Motor Controls Converters Bridge Circuits MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−Source Voltage Drain−Gate Voltage (RGS = 1.0 MΩ) Gate−Source Voltage − Continuous − Non−Repetitive (tpv10 ms) Drain − Continuous @ TA 25°C − Continuous @ TA 100°C − Single Pulse (tpv10 μs) Total Power Dissipation @ TA 25°C Derate above 25°C Total Power Dissipation @ TA 25°C (Note 1.) VDSS VDGR VGS VGS ID ID IDM PD 600 600 "20 "40 5 3.8 17.5 96 0.77 1.75 Vdc Vdc Vdc Adc Apk Watts W/°C Watts Operating and Storage Temperature Range TJ, Tstg −55 to +150 °C Single Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 100 V, VGS = 10 Vdc, IL(pk) = 5 A, L = 10 mH, VDS = 600 Vdc, RG = 25 Ω) EAS 80 mJ Thermal Resistance − Junction−to−Case − Junction−to−Ambient RθJC RθJA °C/W 1.3 62.5 Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C 1. Repetitive rating; pulse width limited by maximum junction temperature. This document contains information on a product under dev...