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C5988 Dataheets PDF



Part Number C5988
Manufacturers PHENITEC SEMICONDUCTOR
Logo PHENITEC SEMICONDUCTOR
Description Silicon NPN Transistor
Datasheet C5988 DatasheetC5988 Datasheet (PDF)

C5988 Silicon NPN transistor epitaxial type C5988 [ Applications ] High current amplifier [ Feature ] Collector current IC= 6A Very low collector saturation voltage VCE(sat)= 550mV (Max.) at IC= 6A, IB= 300mA Exellent gain characteristics specified up to 10 ampers PNP complementary pair with A5988 [ Absolute maximum ratings (Ta=25C) ] Characteristic Symbol Maximum ratings Collector-base voltage VCBO 150 Collector-emitter voltage VCEO 60 Emitter-base voltage VEBO 6 Collector curre.

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C5988 Silicon NPN transistor epitaxial type C5988 [ Applications ] High current amplifier [ Feature ] Collector current IC= 6A Very low collector saturation voltage VCE(sat)= 550mV (Max.) at IC= 6A, IB= 300mA Exellent gain characteristics specified up to 10 ampers PNP complementary pair with A5988 [ Absolute maximum ratings (Ta=25C) ] Characteristic Symbol Maximum ratings Collector-base voltage VCBO 150 Collector-emitter voltage VCEO 60 Emitter-base voltage VEBO 6 Collector current (DC) IC 6 Collector current (Pulse) ICP 20 Junction temperature Tj 150 Storage temperature Tstg -55 to 150 Unit V V V A A C C [ Electrical characteristics (Ta=25C) ] Characteristic Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 150 170 - V IC= 100uA Collector-emitter breakdown voltage BVCEO 60 70 - V IC= 10mA Emitter-base breakdown voltage BVEBO 6 8 - V IE= 100uA Collector cut-off current ICBO - - 50 nA VCB= 120V Emitter cut-off current IEBO - - 10 nA VEB= 6V DC current gain 1 hFE 1 100 - - - VCE= 1V, IC= 10mA DC current gain 2 hFE 2 120 200 300 - VCE= 1V, IC= 2A DC current gain 3 hFE 3 75 100 - - VCE= 1V, IC= 5A DC current gain 4 hFE 4 - 30 - - VCE= 1V, IC= 10A Collector-emitter saturation voltage 1 VCE(sat) 1 - 20 50 mV IC= 100mA, IB= 5mA Collector-emitter saturation voltage 2 VCE(sat) 2 - 80 120 mV IC= 1A, IB= 50mA Collector-emitter saturation voltage 3 VCE(sat) 3 - 150 220 mV IC= 2A, IB= 100mA Collector-emitter saturation voltage 4 VCE(sat) 4 - 400 550 mV IC= 6A, IB= 300mA Base-emitter saturation voltage VBE(sat) - 1.15 1.3 V IC= 6A, IB= 300mA Base-emitter on voltage VBE(on) - 1.05 1.2 V VCE= 1V, IC= 6A Transition frequency fT - 150 - MHz VCE= 10V, IE= -100mA Collector output capacitance Cob - 50 - pF VCB= 10V, f = 1MHz, IE= 0A Notice 1) These are measured data of transistors assembled by PHENITEC SEMICONDUCTOR Corp. and are for reference only. Notice 2) The contents described herein are subject to change without notice. No. C5988-20070213 PHENITEC SEMICONDUCTOR Corp. - 1/2 - Base-emitter saturation voltage : VBE(sat) (V) Collector current : IC (A) Fig.1 IC - VBE(on) at VCE= 1V, Ta= 25C 10 1 0.1 0.01 0.001 0.5 0.7 0.9 1.1 1.3 Base-emitter on voltage : VBE(on) (V) Fig.4 VBE(sat) - IC at IC/IB= 20, Ta= 25C 10 1 0.1 0.001 0.01 0.1 1 10 Collector current : IC (A) 10000 Fig.7 Cib - VEB at f= 1MHz, Ta= 25C Transition frequency : fT (MHz) DC current gain : hFE 1000 Fig.2 hFE - IC at VCE= 1V, Ta= 25C 100 10 0.001 0.01 0.1 1 10 Collector current : IC (A) 1000 Fig.5 fT - IE at VCE= 10V, Ta= 25C 100 10 1 0.001 0.01 0.1 1 Emitter current : -IE (A) Collector output capacitance : Cob (pF) Collector-emitter saturation voltage : VCE(sat) (mV) C5988 1000 Fig.3 VCE(sat) - IC at IC/IB= 20, Ta= 25C 100 10 0.001 0.01 0.1 1 10 Collector current : IC (A) 1000 Fig.6 Cob - VCB at f= 1MHz, Ta= 25C 100 10 0.1 1 10 100 Collector-base voltage : VCB (V) 1000 100 0.1 1 10 Emitter-base voltage : VEB (V) Collector input capacitance : Cib (pF) PHENITEC SEMICONDUCTOR Corp. No. C5988-20070213 - 2/2 - .


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