SSF3616

DESCRIPTION The SSF3616 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = 30V,ID =9A RDS(ON) < 30mΩ @ VGS=4.5V RDS(ON) < 18.5mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product ● Surface Mount Package SSF3616 30V N-Channel MOSFET D G S Schematic Diagram Marking and Pin Assignment APPLICATIONS ●PWM applications ●Load switch ●Power management SOP-8 Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size SSF3616 SSF3616 SOP-8 Ø330mm Tape Width 12mm Quantity 2500 units ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous@ Current-Pulsed (Note 1) ID（25℃） ID（70℃） IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 30 ±25 9 7 40 2.5 -55 To 150 Unit V V A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 62.5 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Min Typ Max Unit 30 V www.goodark.com Page 1 of 6 Rev.1.0 SSF3616 30V N-Channel MOSFET Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-S...