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MBR3060

ON Semiconductor

Axial Lead Rectifier


Description
MBR3060 Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diod...



ON Semiconductor

MBR3060

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