IRF7494PbF

Applications l High frequency DC-DC converters l Lead-Free PD - 95349C IRF7494PbF VDSS 150V HEXFET® Power MOSFET RDS(on) max ID 44mΩ@VGS = 10V 5.1A Benefits l Low Gate to Drain Charge to Reduce Switching Losses S l Fully Characterized Capacitance Including S Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage S G and Current 18 27 36 45 Top View AA D D D D SO-8 Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V cPulsed Drain Current Maximum Power Dissipation dv/dt TJ TSTG Linear Derating Factor hPeak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Thermal Resistance Parameter iRθJL Junction-to-Drain Lead eRθJA Junction-to-Ambient (PCB Mount) Max. 150 ± 20 5.1 4.0 40 2.5 0.02 33 -55 to + 150 Typ. ––– ––– Max. 20 50 Units V A W W/°C V/ns °C Units °C/W Notes  through ‡ are on page 8 www.irf.com 1 10/15/09 IRF7494PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.13 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 35 f44 mΩ VGS = 10V, ID = 3.1A VGS(th) Gate Threshold Voltage 2.5 ––– 4.0 V VDS = VGS, ID...