IRF7524D1PbF

PD -95242 IRF7524D1PbF l Co-packaged HEXFET® Power MOSFET and Schottky Diode l P-Channel HEXFET l Low VF Schottky Rectifier l Generation 5 Technology l Micro8TM Footprint l Lead-Free Description FETKYTM MOSFET & Schottky Diode A1 A2 8K 7K VDSS = -20V S3 6 D RDS(on) = 0.27Ω G4 5D Schottky Vf = 0.39V Top View The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications like cell phone, PDA, etc. The new Micro8TM package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8TM an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8TM will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. Micro8TM Absolute Maximum Ratings ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS dv/dt TJ, TSTG Parameter Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current À Power Dissipation Linear Derating Factor Gate-to-Source Voltage Pea...