NEW PRODUCT
DMN2170U
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance • 70mΩ @VGS = 4.5...
NEW PRODUCT
DMN2170U
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
Low On-Resistance 70mΩ @VGS = 4.5V 100mΩ @VGS = 2.5V 170mΩ @VGS = 1.5V
Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2, 3 and 6) Qualified to AEC-Q101 Standards for High Reliability ESD Protected Gate
Mechanical Data
Case: SOT-23 Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering & Date Code Information: See Page 3 Weight: 0.008 grams (approximate)
SOT-23
Drain
D
ESD PROTECTED TO 3kV
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current (Note 4)
Characteristic
Gate
Gate
Protection Diode
Source
Equivalent Circuit
GS TOP VIEW
Symbol VDSS VGSS ID IDM
Value 20 ±12 2.3 8
Units V V A A
Thermal Characteristics
Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Symbol PD RθJA
TJ, TSTG
Value 600 208 -55 to +150
Units mW °C/W °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic OFF CHA...