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FDP8443_F085 Dataheets PDF



Part Number FDP8443_F085
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDP8443_F085 DatasheetFDP8443_F085 Datasheet (PDF)

FDP8443_F085 N-Channel PowerTrench® MOSFET March 2009 FDP8443_F085 N-Channel PowerTrench® MOSFET 40V, 80A, 3.5mΩ Features „ Typ rDS(on) = 2.7mΩ at VGS = 10V, ID = 80A „ Typ Qg(10) = 142nC at VGS = 10V „ Low Miller Charge „ Low Qrr Body Diode „ UIS Capability (Single Pulse and Repetitive Pulse) „ Qualified to AEC Q101 „ RoHS Compliant Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Electronic Steering „ Integrated Starter / Alternator „ Distribu.

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FDP8443_F085 N-Channel PowerTrench® MOSFET March 2009 FDP8443_F085 N-Channel PowerTrench® MOSFET 40V, 80A, 3.5mΩ Features „ Typ rDS(on) = 2.7mΩ at VGS = 10V, ID = 80A „ Typ Qg(10) = 142nC at VGS = 10V „ Low Miller Charge „ Low Qrr Body Diode „ UIS Capability (Single Pulse and Repetitive Pulse) „ Qualified to AEC Q101 „ RoHS Compliant Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Electronic Steering „ Integrated Starter / Alternator „ Distributed Power Architecture and VRMs „ Primary Switch for 12V Systems ©2009 Fairchild Semiconductor Corporation FDP8443_F085 Rev. A 1 www.fairchildsemi.com FDP8443_F085 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC < 144oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 62oC/W) Pulsed EAS Single Pulse Avalanche Energy PD Power Dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics (Note 1) Ratings 40 ±20 80 20 See Figure 4 531 188 1.25 -55 to +175 Units V V A mJ W W/oC oC RθJC RθJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Package Marking and Ordering Information (Note 2) 0.8 62 oC/W oC/W Device Marking FDP8443 Device FDP8443_F085 Package TO-220AB Reel Size Tube Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Off Characteristics Tape Width N/A Quantity 50 units Min Typ Max Units BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current On Characteristics ID = 250μA, VGS = 0V VDS = 32V, VGS = 0V TC = 150oC VGS = ±20V 40 - - -V - 1 250 μA - ±100 nA VGS(th) Gate to Source Threshold Voltage rDS(on) Drain to Source On Resistance Dynamic Characteristics VGS = VDS, ID = 250μA ID = 80A, VGS= 10V ID TJ = = 8107A5o, CVGS= 10V, 2 2.8 4 V - 2.7 3.5 - 4.7 6.1 mΩ Ciss Coss Crss RG Qg(TOT) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain “Miller“ Charge VDS = 25V, VGS = 0V, f = 1MHz VGS = 0.5V, f = 1MHz VGS = 0 to 10V VGS = 0 to 2V VDD = 20V ID = 35A Ig = 1mA - 9310 - pF - 800 - pF - 510 - pF - 0.9 - Ω - 142 185 nC - 17.5 23 nC - 36 - nC - 18.8 - nC - 32 - nC FDP8443_F085 Rev. A 2 www.fairchildsemi.com FDP8443_F085 N-Channel PowerTrench® MOSFET Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Switching Characteristics (VGS = 10V) ton td(on) tr td(off) tf toff Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time VDD = 20V, ID = 35A VGS = 10V, RGS = 2Ω Drain-Source Diode Characteristics VSD Source to Drain Diode V.


FDI8442 FDP8443_F085 DMN2170U


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