Document
FDP8443_F085 N-Channel PowerTrench® MOSFET
March 2009
FDP8443_F085
N-Channel PowerTrench® MOSFET
40V, 80A, 3.5mΩ
Features
Typ rDS(on) = 2.7mΩ at VGS = 10V, ID = 80A Typ Qg(10) = 142nC at VGS = 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant
Applications
Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering Integrated Starter / Alternator Distributed Power Architecture and VRMs Primary Switch for 12V Systems
©2009 Fairchild Semiconductor Corporation FDP8443_F085 Rev. A
1
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FDP8443_F085 N-Channel PowerTrench® MOSFET
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS VGS
ID
Drain to Source Voltage
Gate to Source Voltage Drain Current Continuous (TC < 144oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 62oC/W) Pulsed
EAS Single Pulse Avalanche Energy
PD
Power Dissipation Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
(Note 1)
Ratings 40 ±20 80 20
See Figure 4 531 188 1.25
-55 to +175
Units V V
A
mJ W W/oC oC
RθJC RθJA
Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient
Package Marking and Ordering Information
(Note 2)
0.8 62
oC/W oC/W
Device Marking FDP8443
Device FDP8443_F085
Package TO-220AB
Reel Size Tube
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
Tape Width N/A
Quantity 50 units
Min Typ Max Units
BVDSS IDSS IGSS
Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current
On Characteristics
ID = 250μA, VGS = 0V
VDS = 32V, VGS = 0V
TC = 150oC
VGS = ±20V
40 -
- -V
-
1 250
μA
- ±100 nA
VGS(th) Gate to Source Threshold Voltage rDS(on) Drain to Source On Resistance
Dynamic Characteristics
VGS = VDS, ID = 250μA
ID = 80A, VGS= 10V
ID TJ
= =
8107A5o, CVGS=
10V,
2 2.8 4
V
- 2.7 3.5
- 4.7 6.1 mΩ
Ciss Coss Crss RG Qg(TOT) Qg(TH) Qgs Qgs2 Qgd
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain “Miller“ Charge
VDS = 25V, VGS = 0V, f = 1MHz
VGS = 0.5V, f = 1MHz
VGS = 0 to 10V
VGS = 0 to 2V
VDD = 20V ID = 35A Ig = 1mA
- 9310
-
pF
- 800 - pF
- 510 - pF
- 0.9 - Ω
-
142 185
nC
- 17.5 23 nC
- 36 - nC
- 18.8 - nC
- 32
- nC
FDP8443_F085 Rev. A
2
www.fairchildsemi.com
FDP8443_F085 N-Channel PowerTrench® MOSFET
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Switching Characteristics (VGS = 10V)
ton td(on) tr td(off) tf toff
Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time
VDD = 20V, ID = 35A VGS = 10V, RGS = 2Ω
Drain-Source Diode Characteristics
VSD Source to Drain Diode V.