FDI8442_F085

FDI8442_F085 N-Channel PowerTrench® MOSFET MPLEMENTATION September 2010 FDI8442_F085 N-Channel PowerTrench® MOSFET 40V, 80A, 3.1m: Features „ Typ rDS(on) = 2.3m: at VGS = 10V, ID = 80A „ Typ Qg(10)= 181nC at VGS= 10V „ Low Miller Charge „ Low Qrr Body Diode „ UIS Capability (Single Pulse and Repetitive Pulse) „ Qualified to AEC Q101 „ RoHS Compliant Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Electronic Steering „ Integrated Starter / Alternator „ Distributed Power Architectures and VRMs „ Primary Switch for 12V Systems AD FREE I LE SOURCE DRAIN GATE DRAIN (FLANGE) TO-262AB FDI SERIES ©2010 Fairchild Semiconductor Corporation FDI8442_F085 Rev. A www.fairchildsemi.com FDI8442_F085 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC<158oC, VGS = 10V) Drain Current Continuous (Tamb = 25oC, VGS = 10V, with RTJA = 62oC/W) Pulsed EAS Single Pulse Avalanche Energy Power Dissipation PD Derate above 25oC (Note 1) TJ, TSTG Operating and Storage Temperature Thermal Characteristics Ratings 40 ±20 80 23 See Figure 4 720 254 1.7 -55 to +175 Units V V A mJ W W/oC oC RTJC RTJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Package Marking and Ordering Information (Note 2) 0.59 62 oC/W oC/W Device Marking FDI8442 Device FDI8442_F085 Package TO...