HUF75344A3 N-Channel UltraFET Power MOSFET
October 2007
HUF75344A3
N-Channel UltraFET Power MOSFET
55V, 75A, 8mΩ
tm
...
HUF75344A3 N-Channel UltraFET Power MOSFET
October 2007
HUF75344A3
N-Channel UltraFET Power MOSFET
55V, 75A, 8mΩ
tm
Features
RDS(on) = 6.5mΩ ( Typ.)@ VGS = 10V, ID = 75A RoHS compliant
Description
This N-channel power MOSFET is produced using Fairchild Semiconductor’s innovative UItraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored change. It was designed for use in applications where power efficiency is important, such as switching
regulators, switching converters, motro drives, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
D
G DS
TO-3PN
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
Parameter
VDSS VGSS ID IDM EAS
PD
Drain to Source Voltage
Gate to Source Voltage Drain Current Drain Current
-Continuous (TC = 130oC) - Pulsed
Single Pulsed Avalanche Energy
Power Dissipation
(TC = 25oC) - Derate above 25oC
TJ, TSTG TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol RθJC RθJA
Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
G (Note 1)
S
Ratings 55 ±20 75 300
1153 288.5 1.92 -55 to +175 300
Ratings 0.52 40
Uni...