BAS116TT1G

Switching Diode BAS116TT1G Features Low Leakage Current Applications Medium Speed Switching Times Available in 8 mm Tape and Reel These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current VR 75 V IF 200 mA IFM(surge) 500 mA THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation, FR−4 Board (Note 1) TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) PD RqJA 225 mW 1.8 mW/°C 555 °C/W Total Device Dissipation, FR−4 Board (Note 2) TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) PD RqJA 360 mW 2.9 mW/°C 345 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to °C +150 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 × 1.0 Inch Pad DATA SHEET www.onsemi.com 3 12 CASE 463 SOT−416 STYLE 2 3 CATHODE 1 ANODE MARKING DIAGRAM AE MG G 1 AE = Specific Device Code M = Date Code G = Pb−Free Package ORDERING INFORMATION Device Package Shipping† BAS116TT1G SOT−416 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specificat...