Main Product Characteristics
VDSS
500V
RDS(on) 0.22ohm(typ.)
ID 18A
Features and Benefits
TO- 220F
Advanced Pro...
Main Product Characteristics
VDSS
500V
RDS(on) 0.22ohm(typ.)
ID 18A
Features and Benefits
TO- 220F
Advanced Process Technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature Lead free product
SSF18N50F
500V N-Channel MOSFET
Marking and Pin Assignment
Schematic Diagram
Description
These N-Channel enhancement mode power field effect
transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies
Absolute Max Rating
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=5.2mH Avalanche Current @ L=5.2mH Operating Junction and Storage Temperature Range
Max. 18 10.8 72 38 0.3 500 ± 30 315 11
-55 to + 150
Units
A
W W/°C
V V mJ A °C
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Rev.1.0
SSF18N50F
500V N-Channel MOSFET
Thermal Resistance
Symbol RθJC
RθJA
Characteristics Junction-to-case③ Junction-to-ambient ...