650V N-Channel MOSFET
Main Product Characteristics
VDSS
650V
RDS(on) 0.36ohm(typ.)
ID 11A
Features and Benefits
High dv/dt and avalanch...
Description
Main Product Characteristics
VDSS
650V
RDS(on) 0.36ohm(typ.)
ID 11A
Features and Benefits
High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Lead free product
TO-220
SSF11NS65
650V N-Channel MOSFET
Marking and Pin Assignment
Schematic Diagram
Description
The SSF11NS65 series MOSFET is a new technology. which combines an innovative super junction technology and advance process. This new technology achieves low RDS(ON), energy saving, high reliability and uniformity, superior power density and space saving.
Absolute Max Rating
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V ① Continuous Drain Current, VGS @ 10V ① Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=22.5mH Avalanche Current @ L=22.5mH Operating Junction and Storage Temperature Range
Max. 11 7 44 162 1.5 650 ± 30 281 5
-55 to + 150
Units
A
W W/°C
V V mJ A °C
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Rev.1.2
SSF11NS65
650V N-Channel MOSFET
Thermal Resistance
Symbol RθJC
RθJA
Characteristics Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④
Typ. — — —
Max. 0.77 62 40
Units ℃/W ℃/W ℃/W
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Qg Qgs Qgd td(on) t...
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