NTTFS4965NF

NTTFS4965NF Power MOSFET 30 V, 64 A, Single N−Channel, WDFN8 Features Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free and are RoHS Compliant Applications CPU Power Delivery Synchronous Rectification for DC−DC Converters Low Side Switching Telecom Secondary Side Rectification MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) http://onsemi.com V(BR)DSS 30 V RDS(on) MAX 3.5 mW @ 10 V 5.2 mW @ 4.5 V ID MAX 64 A N−Channel MOSFET D Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation (Note 1) RqJA TA = 25°C TA = 85°C TA = 25°C Continuous Drain C(Nuortreen1t)RqJA ≤ 10 s TA = 25°C TA = 85°C Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain Current RqJA (Note 2) Steady State TA = 25°C TA = 25°C TA = 85°C Power Dissipation RqJA (Note 2) TA = 25°C Continuous Drain Current RqJC (Note 1) TC = 25°C TC = 85°C Power Dissipation RqJC (Note 1) TC = 25°C Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature VDSS VGS ID PD ID PD ID PD ID PD IDM TJ, Tstg 30 V ±20 V 22 A 15.9 2.69 W 32.4 A 23.4 5.85 W 16.3 A 11.7 1.47 W 64 46 22.73 A W 192 −55 to +150 A °C G 1 WDFN8 (m8FL) CASE 511AB S MARKING DIAGRAM 1 SD S 4965 D S AYWWG D GGD 4965 A Y WW G = Specific Device Code = Assembly Location ...